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GD950HTX75P6HB 数据表(PDF) 2 Page - StarPower Europe AG

部件名 GD950HTX75P6HB
功能描述  750V/950A 6 in one-package
PDF  11 Pages
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制造商  STARPOWER [StarPower Europe AG]
网页  www.starpowereurope.com
标志 STARPOWER - StarPower Europe AG

GD950HTX75P6HB 数据表(HTML) 2 Page - StarPower Europe AG

  GD950HTX75P6HB Datasheet HTML 1Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 2Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 3Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 4Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 5Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 6Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 7Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 8Page - StarPower Europe AG GD950HTX75P6HB Datasheet HTML 9Page - StarPower Europe AG Next Button
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GD950HTX75P6HB
IGBT Module
©2021 STARPOWER Semiconductor Ltd.
9/30/2021
2/11
B05
Absolute Maximum Ratings T
F=25
oC unless otherwise noted
IGBT
Symbol
Description
Values
Unit
VCES
Collector-Emitter Voltage
750
V
VGES
Gate-Emitter Voltage
±20
V
ICN
Implemented Collector Current
950
A
IC
Collector Current @ TF=90
oC
450
A
ICM
Pulsed Collector Current tp=1ms
1900
A
PD
Maximum Power Dissipation
@ TF=75
oC T
j=175
oC
877
W
Diode
Symbol
Description
Values
Unit
VRRM
Repetitive Peak Reverse Voltage
750
V
IFN
Implemented Collector Current
950
A
IF
Diode Continuous Forward Current
450
A
IFM
Diode Maximum Forward Current tp=1ms
1900
A
Module
Symbol
Description
Value
Unit
Tjmax
Maximum Junction Temperature
175
oC
Tjop
Operating Junction Temperature continuous
For 10s within a period of 30s,occurrence
maximum 3000 times over lifetime
-40 to +150
+150 to +175
oC
TSTG
Storage Temperature Range
-40 to +125
oC
VISO
Isolation Voltage RMS,f=50Hz,t=1min
2500
V



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