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STN2NF10 数据表(PDF) 5 Page - STMicroelectronics |
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STN2NF10 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STN2NF10 Electrical characteristics 5/13 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=50V, ID = 2.4A VGS =10V, RG=4.7Ω (see Figure 14) 6 10 ns ns td(off) tf Turn-off delay time Fall time VDD=50V, ID = 2.4A VGS =10V, RG=4.7Ω (see Figure 14) 20 3 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 2.4 17 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 2.4A, VGS=0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 6A, VDD=10V di/dt=100A/µs,Tj=150°C (see Figure 19) 70 175 5 ns nC A |
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