2SC3421 datasheet(2/4 Pages) TOSHIBA

部件名	2SC3421

功能描述	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications

PDF	4 Pages

Scroll/Zoom	100%

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SC3421

2006-11-09

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 120 V, IE = 0

―

100

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

100

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

120

―

DC current gain

hFE

(Note)

VCE = 5 V, IC = 100 mA

―

240

Collector-emitter saturation voltage

VCE (sat)

IC = 500 mA, IB = 50 mA

―

0.30

1.0

Base-emitter voltage

VBE

VCE = 5 V, IC = 500 mA

―

0.78

1.0

Transition frequency

VCE = 5 V, IC = 100 mA

―

120

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

Note: hFE classification O: 80 to 160, Y: 120 to 240

Marking

C3421

Part No. (or abbreviation code)

Characteristics indicator

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

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