2SJ200 datasheet(2/5 Pages) TOSHIBA

2 / 5 page

2SJ200

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain cut−off current

IDSS

VDS = −180 V, VGS = 0

―

−1.0

Gate leakage current

IGSS

VDS = 0, VGS = ±20 V

―

±0.5

μA

Drain−source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0

−180

―

Gate−source cut−off voltage

(Note 2)

VGS (OFF)

VDS = −10 V, ID = −0.1 A

−0.8

―

−2.8

Drain−source saturation voltage

VDS (ON)

ID = −6 A, VGS = −10 V

―

−1.5

−5.0

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −3 A

―

4.0

―

Input capacitance

Ciss

VDS = −30 V, VGS = 0, f = 1 MHz

―

1300

―

Output capacitance

Coss

VDS = −30 V, VGS = 0, f = 1 MHz

―

350

―

Reverse transfer capacitance

Crss

VDS = −30 V, VGS = 0, f = 1 MHz

―

200

―

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VGS (OFF) Classification

O: −0.8~−1.6,

Y: −1.4~−2.8

This transistor is an electrostatic sensitive device. Please handle with caution.

Marking

2SJ200 数据表(PDF) 2 Page - Toshiba Semiconductor

2SJ200 数据表(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

数据表下载

链接网址

2SJ200 数据表(PDF) 2 Page - Toshiba Semiconductor

2SJ200 数据表(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载