2SD2012 datasheet(2/5 Pages) TOSHIBA

部件名	2SD2012

功能描述	Silicon NPN Triple Diffused Type

PDF	5 Pages

Scroll/Zoom	100%

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

标志

2 / 5 page

2SD2012

2006-11-21

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 60 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

100

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 50 mA, IB = 0

―

hFE (1)

VCE = 5 V, IC = 0.5 A

100

―

320

DC current gain

hFE (2)

VCE = 5 V, IC = 2 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 2 A, IB = 0.2 A

―

0.4

1.0

Base-emitter voltage

VBE

VCE = 5 V, IC = 0.5 A

―

0.75

1.0

Transition frequency

VCE = 5 V, IC = 0.5 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

D2012

Part No. (or abbreviation code)

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