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MT3S06FS 数据表(PDF) 2 Page - Toshiba Semiconductor |
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MT3S06FS 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 3 page ![]() MT3S06FS 2007-11-01 2 Microwave Characteristics (Ta = 25°C) Characteristic Symbol Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 5 mA 7 10 ⎯ GHz ⎪S21e⎪ 2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 8.5 ⎯ Insertion gain ⎪S21e⎪ 2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 7 9.5 ⎯ dB Noise figure NF (1) VCE = 1 V, IC = 3 mA, f = 2 GHz ⎯ 1.7 3 dB Electrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 5 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cutoff current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE VCE = 1 V, IC = 5 mA 70 ⎯ 140 Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz(Note) ⎯ 0.25 0.5 pF Note: Cre is measured with a three-terminal method using a capacitance bridge. Caution This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. |
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