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CS20N65A3-R 数据表(PDF) 2 Page - Guangdong Lingxun Microelectronics Co., Ltd

部件名 CS20N65A3-R
功能描述  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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制造商  LINGXUN [Guangdong Lingxun Microelectronics Co., Ltd]
网页  https://www.lxmicro.com/en/EnHome
标志 LINGXUN - Guangdong Lingxun Microelectronics Co., Ltd

CS20N65A3-R 数据表(HTML) 2 Page - Guangdong Lingxun Microelectronics Co., Ltd

  CS20N65A3-R Datasheet HTML 1Page - Guangdong Lingxun Microelectronics Co., Ltd CS20N65A3-R Datasheet HTML 2Page - Guangdong Lingxun Microelectronics Co., Ltd CS20N65A3-R Datasheet HTML 3Page - Guangdong Lingxun Microelectronics Co., Ltd CS20N65A3-R Datasheet HTML 4Page - Guangdong Lingxun Microelectronics Co., Ltd CS20N65A3-R Datasheet HTML 5Page - Guangdong Lingxun Microelectronics Co., Ltd  
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CS20N65A
N-Channel Enhancement Mode Power MOSFET
Symbol
Min
Typ
Max
Unit
BVDSS
650
-
-
V
IDSS
-
-
1
µA
IGSS
-
-
±100
nA
VGS(th)
2
-
4
V
RDS(on)
-
-
0.5
Ω
gfs
-
18
-
S
Ciss
-
2980
-
pF
Coss
-
320
-
pF
Crss
-
20
-
pF
td(ON)
-
36
-
ns
tr
-
75
-
ns
td(OFF)
-
79
-
ns
tf
-
59
-
ns
QG
-
58
-
nC
QGS
-
14
-
nC
QGD
-
23
-
nC
Symbol
Min.
Typ.
Max.
Unit
IS
-
-
20
A
ISM
-
-
80
A
VSD
-
-
1.4
V
trr
-
590
-
ns
Qrr
-
6.8
-
μC
Thermal Resistance, Junction to Case
R
°C
RθJC
Maximum Ratings at Tc=25°C unless otherwise specified
Gate-Source Voltage
VDS
Storage Temperature Range
150
-55 to +150
Operating Temperature Range
Pulsed Drain Current (Note1)
°C
2.78
0.5
Power Dissipation
PD
W
250
45
Fall Time(Note2)
Characteristics
A
ID
20
V
±30
V
Drain-Source Voltage
650
Symbol
Characteristics
Unit
220AB/263
220F
247/247S
Value
VGS
250
0.5
Thermal Resistance, Junction to Ambient
RθJA
40
62.5
40
TSTG
Reverse Recovery Charge(Note2)
Maximun Body-Diode Pulsed
Current(Note2)
Maximun Body-Diode Continuous Current
VGS = ± 30 V, VDS = 0 V
VDS = VGS , ID = 250 µA
VGS = 10 V, ID = 10 A
VDS = 15 V, ID = 10 A
ID = 20 A, VDD = 250 V,
RG= 10 Ω
ID = 20 A, VDD = 400 V,
VGS = 10 V
VGS = 0 V, VDS = 25 V,
f = 1 MHz
Input Capacitance
Forward Transconductance
ISD = 20 A, VGS = 0 V,
dIF / dt = 100 A/µs
Total Gate Charge(Note2)
Gate to Source Charge(Note2)
Gate to Drain Charge(Note2)
Test Condition
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time(Note2)
Rise Time(Note2)
Turn-Off Delay Time(Note2)
Reverse Recovery Time(Note2)
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
VGS = 0 V,ID = 250 µA
VDS = 650 V, VGS = 0 V
IDM
Characteristics
80
A
°C/W
Test Condition
Continue Drain Current
Electrical Characteristics at Tc=25°C unless otherwise specified
°C/W
ISD = 20 A
Note2:Pulse test: 300 µs pulse width, 2 % duty cycle
Single Pulse Avalanche Energy (Note1)
EAS
1200
mJ
Note1:Pulse test: 300 µs pulse width, 2 % duty cycle
TJ
Drain-Source Diode Forward Voltage
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