RN1107~1109

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1107, RN1108, RN1109

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors.

Simplified circuit design

Reduced number of parts and simplified manufacturing process

Complementary to RN2107~2109

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN1107~1109

50

V

Collector-emitter voltage

RN1107~1109

50

V

RN1107

6

RN1108

7

Emitter-base voltage

RN1109

15

V

Collector current

RN1107~1109

100

mA

Collector power dissipation

RN1107~1109

100

mW

Junction temperature

RN1107~1109

150

°C

Storage temperature range

RN1107~1109

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.4mg

Unit: mm

Type No.

R1 (kΩ)R2 (kΩ)

RN1107

10

47

RN1108

22

47

RN1109

47

22