5DL2CZ47A,5FL2CZ47A,5GL2CZ47A

2006-11-08

1

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A

SWITCHING MODE POWER SUPPLY APPLICATION

CONVERTER & CHOPPER APPLICATION

Repetitive Peak Reverse Voltage

Average Output Rectified Current

Ultra Fast Reverse-Recovery Time

Low Switching Losses and Output Noise.

CHARACTERISTIC

SYMBOL

RATING

UNIT

5DL2CZ47A

200

5FL2CZ47A

300

Repetitive Peak

Reverse Voltage

5GL2CZ47A

400

V

Average Output Rectified Current

5

A

25 (50Hz)

Peak One Cycle Surge Forward

Current (Sin Wave)

27.5 (60Hz)

A

Junction Temperature

−40~150

°C

Storage Temperature Range

−40~150

°C

Screw Torque

―

0.6

N·m

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

CHARACTERISTIC

SYMBOL

TEST CONDITION

TYP.

MAX

UNIT

5DL2CZ47A

―

0.98

5FL2CZ47A

―

1.3

Peak Forward

Voltage

(Note 1)

5GL2CZ47A

―

1.8

V

5DL2CZ47A

―

10

5FL2CZ47A

―

10

Repetitive Peak

Reverse Current

(Note 1)

5GL2CZ47A

―

50

μA

Reverse Recovery Time

(Note 1)

―

35

ns

Forward Recovery Time

(Note 1)

―

100

ns

Thermal Resistance

Total DC, Junction to Case

―

3.8

°C / W

Note 1: A value applied to one cell.

POLARITY

JEDEC

―

JEITA

―

TOSHIBA

12−10C1A

Weight: 2.0 g

Unit: mm