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STP8NM50 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP8NM50
功能描述  N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP8NM50 数据表(HTML) 5 Page - STMicroelectronics

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STP8NM50 - STP8NM50FP
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=250 V, ID=2.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
16
8
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID=5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
14
6
13
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
8
32
A
A
VSD
Forward on voltage
ISD=10A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=5A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
(see Figure 20)
185
1.1
11.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=5A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
(see Figure 20)
270
1.6
12
ns
µC
A



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