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PD421807 数据表(PDF) 3 Page - Powerex Power Semiconductors

部件名 PD421807
功能描述  POW-R-BLOK Dual SCR / Diode Isolated Module (700 Amperes / Up to 1800 Volts)
PDF  5 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

PD421807 数据表(HTML) 3 Page - Powerex Power Semiconductors

  PD421807 Datasheet HTML 1Page - Powerex Power Semiconductors PD421807 Datasheet HTML 2Page - Powerex Power Semiconductors PD421807 Datasheet HTML 3Page - Powerex Power Semiconductors PD421807 Datasheet HTML 4Page - Powerex Power Semiconductors PD421807 Datasheet HTML 5Page - Powerex Power Semiconductors  
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PRELIMINARY
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Dual SCR / Diode Isolated Module
700 Amperes / Up to 1800 Volts
Electrical Characteristics, TJ=25
°°°°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
Repetitive Peak Forward Leakage Current
IDRM
Up to 1800V, TJ=125
° C
100
mA
Repetitive Peak Reverse Leakage Current
IRRM
Up to 1800V, TJ=125
° C
100
mA
Peak On-State Voltage
VTM
ITM=3000A, TJ=125
° C
1.30
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 125
° C, I = 15%IT(AV) to πIT(AV)
0.703
0.184
V
m
Ω
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
TJ = 125
° C, I = πIT(AV) to ITSM
1.01
0.117
V
m
Ω
VTM Coefficients, Full Range
TJ = 125
° C, I = 50A to 6kA
VTM = A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.7999
-4.62 E-02
7.33 E-05
1.10 E-02
Minimum dV/dt
dV/dt
Exponential to 0.67VDRM
Tj=125
° C, Gate Open
600
V/
µs
Typical Diode Reverse Recovery Time
TRR
Tj=25
° C, IF=1500A,
dIR /dt = 25A/
µs, TP= 190 µs
22 Typ.
µs
Gate Trigger Current
IGT
Tj=25
° C, VD=12V
200
mA
Gate Trigger Voltage
VGT
Tj=25
° C, VD=12V
3.0
Volts
Non-Triggering Gate Voltage
VGDM
Tj=125
° C, VD= ½ VDRM
0.15
Volts
Holding Current
IH
300
mA
Peak Forward Gate Current
IGTM
4.0
Amp
Peak Reverse Gate Voltage
VGRM
5
Volts
Maximum Average Gate Power Dissipation
PGM (AVE)
16
Watts
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
RΘJ-C
Per Module, both conducting
Per Junction, both conducting
0.029
0.058
° C/W
° C/W
Thermal Impedance Coefficients
ZΘJ-C
ZΘJ-C= K1 (1-exp(-t/t1))
+ K2 (1-exp(-t/t2))
+ K3 (1-exp(-t/t3))
+ K4 (1-exp(-t/t4))
K1 = 5.04 E-04
K2 = 2.31 E-03
K3 = 2.83 E-03
K4 =5.24 E-02
t1 = 2.47 E-03
t2 = 4.42 E-02
t3 = 1.370
t4 = 9.668
Thermal Resistance, Case to Sink Lubricated
RΘC-S
Per Module
0.009
° C/W
10/04/2002
PD42__07



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