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TLP830F 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TLP830F
功能描述  Infrared LED Phototransistor
PDF  9 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TLP830F 数据表(HTML) 3 Page - Toshiba Semiconductor

  TLP830F Datasheet HTML 1Page - Toshiba Semiconductor TLP830F Datasheet HTML 2Page - Toshiba Semiconductor TLP830F Datasheet HTML 3Page - Toshiba Semiconductor TLP830F Datasheet HTML 4Page - Toshiba Semiconductor TLP830F Datasheet HTML 5Page - Toshiba Semiconductor TLP830F Datasheet HTML 6Page - Toshiba Semiconductor TLP830F Datasheet HTML 7Page - Toshiba Semiconductor TLP830F Datasheet HTML 8Page - Toshiba Semiconductor TLP830F Datasheet HTML 9Page - Toshiba Semiconductor  
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TLP830(F)
2007-10-01
3
Precaution
1. If the chemical are used for cleaning, the soldered surface only shall be cleaned with chemicals avoiding the
whole cleaning of the package.
2. The container is made of polybutylene terephthalate. Oil or chemicals may cause melting or cracks. Check the
environment carefully before installing.
3. Shall be mounted on an unwarped surface.
4. A visible light cut
−off type photo transistor which blocks light with frequencies of 700nm or above is used.
However, the device cannot block ambient light with a wavelength of 700nm or more or sunlight. Install
avoiding the disturbance light.
5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a
circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion
efficiency to fluctuation in infrared LED optical output is 1: 1.
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