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PM50CSD060 数据表(PDF) 3 Page - Powerex Power Semiconductors

部件名 PM50CSD060
功能描述  Intellimod??Module Three Phase IGBT Inverter Output (50 Amperes/600 Volts)
PDF  4 Pages
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制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

PM50CSD060 数据表(HTML) 3 Page - Powerex Power Semiconductors

  PM50CSD060 Datasheet HTML 1Page - Powerex Power Semiconductors PM50CSD060 Datasheet HTML 2Page - Powerex Power Semiconductors PM50CSD060 Datasheet HTML 3Page - Powerex Power Semiconductors PM50CSD060 Datasheet HTML 4Page - Powerex Power Semiconductors  
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PM50CSD060
Intellimod™ Module
Three Phase IGBT Inverter Output
50 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level Inverter Part
OC
Tj = -20°C
——
220
Amperes
(VD = 15V)
Tj = 25°C
109
128
180
Amperes
Tj = 125°C65
——
Amperes
Short Circuit Trip Level Inverter Part
SC
-20
°C ≤ Tj ≤ 125°C, VD = 15V
132
Amperes
Over Current Delay Time
toff(OC)
VD = 15V
10
µS
Over Temperature Protection (VD = 15V)
OT
Trip Level
111
118
125
°C
(Lower Arm)
OTR
Reset Level
100
°C
Supply Circuit Under Voltage Protection
UV
Trip Level
11.5
12.0
12.5
Volts
(-20
≤ Tj ≤ 125°C)
UVR
Reset Level
12.5
Volts
Circuit Current
ID
VD = 15V, VCIN = 15V, VN1-VNC
40
55
mA
VD = 15V, VCIN = 15V, VXP1-VXPC
13
18
mA
Input ON Threshold Voltage
VCIN(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
VCIN(off)
UP, VP, WP, UN, VN, WN-VNC
1.7
2.0
2.3
Volts
Fault Output Current*
IFO(H)
VD = 15V, VFO = 15V
——
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
10
15
mA
Minimum Fault Output Pulse Width*
tFO
VD = 15V
1.0
1.8
mS
*Fault output is given only when the internal OC, SC, OT and UV protections schemes of either upper or lower devide operate to protect it.
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each IGBT
——
1.00
°C/Watt
Rth(j-c)F
Each FWDi
——
2.50
°C/Watt
Rth(j-c´)Q
Each IGBT**
——
0.82
°C/Watt
Rth(j-c´)F
Each FWDi**
——
1.51
°C/Watt
Contact Thermal Resistance
Rth(c-f)
Case to Fin Per Module,
——
0.027
°C/Watt
Thermal Grease Applied
** TC measured point is just under chip.
† If you use this value, Rth(f-a) should be measured just under the chips.
Recommended Conditions for Use
Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 400
Volts
Control Supply Voltage***
VD
Applied between VUP1-VUPC,
15
± 1.5
Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP, VP, WP, UN, VN, WN-VNC
4.0 ~ VD
Volts
PWM Input Frequency
fPWM
Using Application Circuit
0 ~ 20
kHz
Minimum Dead Time
tDEAD
Input Signal
≥ 2.5
µS
*** With ripple satisfying the following conditions: dv/dt swing
≤ ±5V/µs, Variation ≤ 2V peak to peak.



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