TLP705F

2007-10-01

1

TOSHIBA

11-5J101

Weight：0.26 g (t yp.)

Unit in mm

4.58±0.25

0.4±0.1

1 2 3

1.27±0.2

6 5 4

11.7±0.3

0.75±0.25

7.62±0.25

11-5J101

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC

TLP705F

Plasma Display Panel

Industrial Inverter

IGBT/Power MOSFET Gate Drive

TLP705F consists of a GaAℓAs light emitting diode and a integrated

photodetector.

This unit is 6-lead SDIP package. TLP705F is 50% smaller than 8PIN DIP

and has suited the safety standard reinforced insulation class.

So mounting area in safety standard required equipment can be reduced.

TLP705F is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP705F is capable of “direct” gate drive of lower Power IGBTs.

Absolute Maximum ratings and electrical characteristics are the same as

The TLP705 technical data sheets.

• Peak output current

: ±0.45 A (max)

• Operating frequency

: 250kHz (max)

• Guaranteed performance over temperature : −40 to 100°C

• Supply current

: 3mA (max)

• Power supply voltage

: 10 to 20 V

• Threshold input current

: 200 ns (max)

• Common mode transient immunity

: ±10 kV/μs(min)

• Isolation voltage

: 5000 Vrms(min)

• UL Recognized

:UL1577, File No.E67349

• Construction Mechanical Rating

Creepage Distance

Clearance

Insulation Thickness

8.0 mm (min)

8.0 mm (min)

0.4 mm (min)

• Option (D4)

TÜV approved

: EN60747-5-2

Certificate No. R50033433

Maximum operating insulation voltage

Highest permissible over voltage

Truth Table

Input

LED

Tr1

Tr2

Output

H

ON

ON

OFF

H

L

OFF

OFF

ON

L

A 0.1

μF bypass capacitor must be connected

between pin 6 and 4. (See Note 6)

1

+

3

−

GND

(Tr1)

(Tr2)

6

5

4

SHIELD

1: Anode

2: NC

3: Cathode

4: GND

1

3

4

5

6

2

SHIELD

Schematic