SSM3K16FS

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K16FS

High Speed Switching Applications

Analog Switch Applications

• Suitable for high-density mounting due to compact package

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

±10

V

DC

100

Drain current

Pulse

200

mA

Drain power dissipation (Ta

= 25°C)

100

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Internal connections

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

D S

1

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12

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