STS25NH3LL datasheet(3/11 Pages) STMICROELECTRONICS

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STS25NH3LL

Electrical characteristics

3/11

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 18 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 12.5 A

VGS= 4.5 V, ID= 12.5 A

0.0032

0.004

0.0035

0.005

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance

VDS = 10 V, ID = 12.5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

4450

655

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 25 A

VGS = 4.5 V

Figure 14

12.5

QOSS

(2)

QOSS = Coss * ∆ Vin, Coss = Cgd + Cds

Output charge

VDD= 24 V, VGS = 0

Gate input resistance

f = 1 MHz, gate DC bias =0

test signal level = 20 mV

open drain

Ω

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