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ISL7119RHF/PROTO 数据表(PDF) 8 Page - Renesas Technology Corp |
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ISL7119RHF/PROTO 数据表(HTML) 8 Page - Renesas Technology Corp |
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8 / 11 page ![]() FN6607 Rev.5.02 Page 8 Feb 13, 2025 ISL7119RH, ISL7119EH Datasheet 5. Die and Assembly Characteristics 6. Metallization Mask Layout Table 1. Die and Assembly Related Information Die Information Dimensions 2030µm x 2030µm (~80mils x 80mils) Thickness: 483µm ±25.4µm (19mils ±1mil) Interface Materials Glassivation Type: PSG (Phosphorous Silicon Gas) Thickness: 8.0kÅ ± 1.0kÅ Top Metallization Type: AISiCu Thickness: 16.0kÅ ± 2kÅ Backside Finish Silicon Assembly Information Substrate Potential Unbiased (DI) Additional Information Worst Case Current Density <2.0 x 105A/cm2 Transistor Count 66 |
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