GD05MPS17J datasheet(1/3 Pages) ISC

部件名	GD05MPS17J

功能描述	Silicon Carbide Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

ISCD7049

eq GD05MPS17J

Silicon Carbide Schottky Diode

www.iscsemi.com

1

FEATURES

· Low Thermal Resistance

· Low Reverse Leakage Current

· Positive Temperature Coefficient of VF

APPLICATIONS

· EV Fast Chargers

· Motor Drives

· Switched Mode Power Supply (SMPS)

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Repetitisve Peak Reverse Voltage

1700

V

IF

Continuous Forward Current

Tc=100°C,D=1

15

A

Tc=135°C,D=1

11

Tc=164°C,D=1

5

IFSM

Non-Repetitive Forward Surge

Current

Tc=25°C,Tp=10ms,Half Sine Pulse

50

A

Tc=150°C,Tp=10ms,Half Sine Pulse

40

IFRM

Repetitive Peak Forward Surge

Current

Tc=25°C,Tp=10ms,Half Sine Pulse

30

A

Tc=110°C,Tp=10ms,Half Sine Pulse

21

Ptot

Power Dissipation

Tc=25°C

149

W

TJ

Junction Temperature

-55~175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

TYP.

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.01

℃

/W

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