IXFN80N50 datasheet(1/3 Pages) ISC

部件名	IXFN80N50

功能描述	N-Channel MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

ISFM1316

eq IXFN80N50

N-Channel MOSFET

www.iscsemi.com

1

DESCRIPTION

· Drain Current -ID= 80A@ TC=25℃

· Drain Source Voltage

-VDSS= 500V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 55Ω(Max)@VGS= 10V

APPLICATIONS

· DC-DC converter

· Battery Chargers

· High speed power switch

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-continuous@ TC=25℃

80

A

IDM

Pulse Drain Current

320

A

PD

Total Dissipation@TC=25℃

780

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.16

℃

/W

D

G

S

SOT-227 package

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