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ST72F521 数据表(PDF) 168 Page - STMicroelectronics |
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ST72F521 数据表(HTML) 168 Page - STMicroelectronics |
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168 / 215 page ![]() ST72F521, ST72521B 168/215 OPERATING CONDITIONS (Cont’d) 12.3.2 Operating Conditions with Low Voltage Detector (LVD) Subject to general operating conditions for VDD, fCPU, and TA. Notes: 1. Data based on characterization results, tested in production for ROM devices only. 2. When VtPOR is faster than 100 µs/V, the Reset signal is released after a delay of max. 42µs after VDD crosses the VIT+(LVD) threshold. 3. If the medium or low thresholds are selected, the detection may occur outside the specified operating voltage range. Below 3.8V, device operation is not guaranteed. 12.3.3 Auxiliary Voltage Detector (AVD) Thresholds Subject to general operating conditions for VDD, fCPU, and TA. 1. Data based on characterization results, tested in production for ROM devices only. 12.3.4 External Voltage Detector (EVD) Thresholds Subject to general operating conditions for VDD, fCPU, and TA. 1. Data based on characterization results, not tested in production. Symbol Parameter Conditions Min Typ Max Unit VIT+(LVD) Reset release threshold (VDD rise) VD level = High in option byte 4.0 1) 4.2 4.5 V VD level = Med. in option byte3) VD level = Low in option byte3) 3.55 1) 2.95 1) 3.75 3.15 4.01) 3.351) VIT-(LVD) Reset generation threshold (VDD fall) VD level = High in option byte 3.8 4.0 4.25 1) VD level = Med. in option byte3) VD level = Low in option byte3) 3.351) 2.81) 3.55 3.0 3.751) 3.15 1) Vhys(LVD) LVD voltage threshold hysteresis 1) VIT+(LVD)-VIT-(LVD) 150 200 250 mV VtPOR VDD rise time 1)2) Flash device, LVD enabled 6 µs/V 20ms/V ROM device, LVD enabled 6 µs/V 100ms/V tg(VDD) VDD glitches filtered (not detect- ed) by LVD 1) 40 ns Symbol Parameter Conditions Min Typ Max Unit VIT+(AVD) 1 ⇒0 AVDF flag toggle threshold (VDD rise) VD level = High in option byte 4.4 1) 4.6 4.9 V VD level = Med. in option byte VD level = Low in option byte 3.95 1) 3.4 1) 4.15 3.6 4.41) 3.81) VIT-(AVD) 0 ⇒1 AVDF flag toggle threshold (VDD fall) VD level = High in option byte 4.2 4.4 4.65 1) VD level = Med. in option byte VD level = Low in option byte 3.751) 3.21) 4.0 3.4 4.2 1) 3.6 1) Vhys(AVD) AVD voltage threshold hysteresis VIT+(AVD)-VIT-(AVD) 200 mV ∆VIT- Voltage drop between AVD flag set and LVD reset activated VIT-(AVD)-VIT-(LVD) 450 mV Symbol Parameter Conditions Min Typ Max Unit VIT+(EVD) 1 ⇒0 AVDF flag toggle threshold (VDD rise) 1) 1.15 1.26 1.35 V VIT-(EVD) 0 ⇒1 AVDF flag toggle threshold (VDD fall) 1) 1.1 1.2 1.3 Vhys(EVD) EVD voltage threshold hysteresis VIT+(EVD)-VIT-(EVD) 200 mV |
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