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ST72F521 数据表(PDF) 182 Page - STMicroelectronics |
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ST72F521 数据表(HTML) 182 Page - STMicroelectronics |
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182 / 215 page ![]() ST72F521, ST72521B 182/215 12.8 I/O PORT PIN CHARACTERISTICS 12.8.1 General Characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Figure 95. Unused I/O Pins configured as input Figure 96. Typical IPU vs. VDD with VIN=VSS Notes: 1. Data based on characterization results, not tested in production. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 3. When the current limitation is not possible, the VIN maximum must be respected, otherwise refer to IINJ(PIN) specifica- tion. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Refer to section 12.2.2 on page 166 for more details. 4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example and leaving the I/O unconnected on the board or an external pull-up or pull-down resistor (see Figure 95). Data based on design simulation and/or technology characteristics, not tested in production. 5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de- scribed in Figure 96). 6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage 1) CMOS ports 0.3xVDD V VIH Input high level voltage 1) 0.7xVDD Vhys Schmitt trigger voltage hysteresis 2) 0.7 VIL Input low level voltage 1) TTL ports 0.8 VIH Input high level voltage 1) 2 Vhys Schmitt trigger voltage hysteresis 2) 1 IINJ(PIN) 3) Injected Current on PC6 (Flash de- vices only) VDD=5V 0+4 mA Injected Current on an I/O pin ± 4 ΣIINJ(PIN)3) Total injected current (sum of all I/O and control pins) ± 25 IL Input leakage current VSS≤VIN≤VDD ±1 µA IS Static current consumption Floating input mode4) 400 RPU Weak pull-up equivalent resistor 5) VIN=VSS VDD=5V 50 120 250 k Ω CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time 1) CL=50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time 1) 25 tw(IT)in External interrupt pulse time 6) 1tCPU 10k Ω UNUSED I/O PORT ST7XXX 10k Ω UNUSED I/O PORT ST7XXX VDD Note: I/O can be left unconnected if it is configured as output greater EMC robustness and lower cost. (0 or 1) by the software. This has the advantage of 0 10 20 30 40 50 60 70 80 90 22.5 33.5 4 4.5 55.5 6 Vdd(V) Ta=1 40°C Ta=9 5°C Ta=2 5°C Ta=-45 °C |
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