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IXFN100N20 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFN100N20 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISFM1317 eq IXFN100N20 N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 1mA 200 -- V IDSS Zero Gate Voltage Drain Current VDS= 160V, VGS= 0V, TJ = 25℃ -- 400 uA VDS= 160V, VGS= 0V, TJ = 125℃ -- 2 mA IGSS Gate-Body Leakage Current VGS= ±20V, VDS= 0V -- ± 200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= 8mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V, ID= 50A -- 23 mΩ VSD Forward On-Voltage IS= 100A, VGS= 0V -- 1.5 V PACKAGE DIMENSIONS (UNIT: mm) DIM Millimeter min max A 31.40 31.60 B 7.70 8.10 C 4.20 4.40 D 4.20 4.40 E 4.10 4.40 F 14.90 15.10 G 30.10 30.30 H 38.00 38.40 J 12.00 12.60 K 9.35 9.65 L 0.74 0.84 M 12.30 12.70 N 24.40 25.00 0 1.90 2.10 P 2.92 3.32 Q 26.60 27.00 R 3.80 4.20 S 4.95 5.45 T 23.70 24.30 U 0 0.10 V 3.50 5.50 W 20.15 20.45 Z 2.50 2.70 |
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