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V1.0

16/09/19

Transistor

NPN, TO-3

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Features:

• Power dissipation - Pd = 115W at Tc = 25°C

• DC current gain hFE = 20 ~ 70 at Ic = 4A

• VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA

• Designed for use in general-purpose amplifier and switching applications

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

60

V

Collector-Emitter Voltage

Vcex

70

Collector-Base Voltage

Vcbo

100

Emitter-Base Voltage

Vebo

7

Collector Current-Continuous

Ic

15

A

Base Current

Ib

7

Total Device Dissipation at TC = 25°C Derate above 25°C

Pd

115

0.657

W

W/°C

Operating and Storage Junction Temperature Range

Tj, Tstg

-65 to +150

°C

Maximum Ratings

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

1.52

°C/W

Thermal Characteristics