HT8KF6H

Datasheet

l

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - case

RthJC*1

-

-

8.7

℃/W

Thermal resistance, junction - ambient

RthJA*4

-

-

62.5

℃/W

l

lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = 1mA

150

-

-

V

Breakdown voltage

temperature coefficient

ΔV(BR)DSS ID = 1mA

-

98

-

mV/℃

ΔTj

referenced to 25℃

Zero gate voltage

drain current

IDSS

VDS = 150V, VGS = 0V

-

-

1

μA

Gate - Source

leakage current

IGSS

VGS = ±20V, VDS = 0V

-

-

±100

nA

Gate threshold

voltage

VGS(th)

VDS = VGS, ID = 1mA

2.0

-

4.0

V

Gate threshold voltage

temperature coefficient

ΔV

GS(th)

ID = 1mA

-

-5.7

-

mV/℃

ΔTj

referenced to 25℃

Static drain - source

on - state resistance

RDS(on)*5

VGS = 10V, ID = 2.5A

-

165

214

mΩ

VGS = 6V, ID = 2.5A

-

176

263

Gate resistance

RG

-

-

1.9

-

Ω

Forward Transfer

Admittance

|Yfs|*5

VDS = 5V, ID = 2.5A

2.5

-

-

S

*1 Tc = 25℃, Limited only by maximum temperature allowed.

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 L ⋍ 0.05mH, VDD = 75V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2

*4 Mounted on a Cu board (40×40×0.8mm)

*5 Pulsed

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