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TLP621 数据表(PDF) 4 Page - Toshiba Semiconductor |
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TLP621 数据表(HTML) 4 Page - Toshiba Semiconductor |
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4 / 10 page ![]() TLP621,TLP621 −2,TLP621−4 2002-09-25 4 Maximum Ratings (Ta = 25°C) Rating Characteritic Symbol TLP621 TLP621 -2 TLP621 -4 Unit Forward current IF 60 50 mA Forward current derating ∆IF /°C -0.7 (Ta > 39°C) -0.5 (Ta = 25°C) mA /°C Pulse forward current IFP 1 (100µs pulse, 100pps) A Power dissipation PD 100 70 mW Power dissipation derating ∆PD /°C -1.0 -0.7 mW /°C Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector -emitter voltage VCEO 55 V Emitter -collector valtage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit, Ta ≥ 25°C) ∆PC /°C -1.5 -1.0 mW /°C Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT /°C -2.5 -1.5 mW /°C Isolation voltage (Note 1) BVS 5000 (AC, 1min., R.H.≤ 60%) Vrms (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Operating temperature Topr -25 ― 85 °C |
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