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PCA82C250 数据表(PDF) 4 Page - NXP Semiconductors |
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PCA82C250 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 18 page ![]() PCA89C250 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 06 — 25 August 2011 4 of 18 NXP Semiconductors PCA82C250 CAN controller interface LOW level. The microcontroller should react to this condition by switching the transceiver back to normal operation (via pin 8). Because the receiver is slow in Standby mode, the first message will be lost. [1] X = don’t care. 9. Limiting values [1] In accordance with “IEC 60747-1”. An alternative definition of virtual junction temperature is: Tvj =Tamb +Pd Rth(vj-a), where Rth(j-a) is a fixed value to be used for the calculation of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (Pd) and ambient temperature (Tamb). [2] Classification A: human body model; C = 100 pF; R = 1500 ; V = 2000 V. [3] Classification B: machine model; C = 200 pF; R = 25 ; V = 200 V. Table 4. Truth table of the CAN transceiver Supply TXD CANH CANL Bus state RXD 4.5 V to 5.5 V 0 HIGH LOW dominant 0 4.5 V to 5.5 V 1 (or floating) floating floating recessive 1 < 2 V (not powered) X[1] floating floating recessive X[1] 2V<VCC < 4.5 V >0.75VCC floating floating recessive X[1] 2V<VCC <4.5 V X[1] floating if VRs >0.75VCC floating if VRs > 0.75VCC recessive X[1] Table 5. Pin Rs summary Condition forced at pin Rs Mode Resulting voltage or current at pin Rs VRs >0.75VCC Standby IRs < 10 A 10 A< I Rs < 200 A Slope control 0.4VCC <VRs <0.6VCC VRs <0.3VCC High-speed IRs < 500 A Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to pin 2; positive input current. Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.3 +9.0 V Vn DC voltage at pins 1, 4, 5 and 8 0.3 VCC +0.3 V V6, 7 DC voltage at pins 6 and 7 0 V < VCC <5.5 V; no time limit 8.0 +18.0 V Vtrt transient voltage at pins 6 and 7 see Figure 8 150 +100 V Tstg storage temperature 55 +150 C Tamb ambient temperature 40 +125 C Tvj virtual junction temperature [1] 40 +150 C Vesd electrostatic discharge voltage [2] 2000 +2000 V [3] 200 +200 V |
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