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TLN233F 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TLN233F 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() TLN233(F) 2007-10-01 1 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233(F) Lead(Pb)-Free Infrared LED for Space-Optical-Transmission • High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±13° (typ.) • A light source for remote control • Wireless AV-signal transmission purposes • High-speed data transmission purposes Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current IF 100 mA Pulse forward current IFP 1000 (Note 1) mA Power dissipation PD 200 mW Reverse voltage VR 4 V Operating temperature range Topr −25~85 °C Storage temperature range Tstg −30~100 °C Soldering temperature (5 s), (Note 2) Tsol 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: f = 100 kHz, duty = 1% Note 2: Soldering must be performed under the stopper. Unit: mm TOSHIBA 4-5V3 Weight: 0.3 g (typ.) Pin Connection 12 1. Anode 2. Cathode |
类似零件编号 - TLN233F |
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类似说明 - TLN233F |
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