1N5822 datasheet(2/5 Pages) STMICROELECTRONICS

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Symbol

Parameter

Tests Conditions

1N5820 1N5821 1N5822

Unit

IR *

Reverse leakage

current

Tj = 25

°CVR = VRRM

Tj = 100

°C

VF *

Forward voltage drop

Tj = 25

°CIF = 3 A

0.475

0.5

0.525

Tj = 25

°CIF = 9.4 A

0.85

0.9

0.95

Pulse test : * tp = 380

µs, δ < 2%

To evaluate the conduction losses use the following equations :

P = 0.33 x IF(AV) + 0.035 IF

(RMS ) for 1N5820 / 1N5821

P = 0.33 x IF(AV) + 0.060 IF

(RMS ) for 1N5822

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

Lead length = 10 mm

°C/W

Rth (j-l)

Junction to lead

Lead length = 10 mm

°C/W

THERMAL RESISTANCES

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

PF(av)(W)

IF(av) (A)

δ=tp/T

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

Fig. 1: Average forward power dissipation versus

average forward current (1N5820/1N5821).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

PF(av)(W)

IF(av) (A)

δ=tp/T

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

Fig. 2: Average forward power dissipation versus

average forward current (1N5822).

1N582x

2/5

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