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RFAM3790 数据表(PDF) 1 Page - Qorvo, Inc |
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RFAM3790 数据表(HTML) 1 Page - Qorvo, Inc |
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1 / 8 page ![]() RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER Data Sheet Rev.D, Oct 07, 2021 | Subject to change without notice 1 of 8 www.qorvo.com ® Product Description The RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. 9 pin, 11.0 mm x 11.0 mm x 1.375 mm package Product Features • Excellent Linearity • Extremely High Output Capability • Voltage Controlled Attenuator • Power Enable Featrure • Extremely Low Distortion • Optimal Reliability • Low Noise • Unconditionally Stable Under all Terminations • 28.5 dB Typical Gain at 1218MHz • 410mA Typical at 12VDC Functional Block Diagram Power Enable INPUT OUTPUT Preamp Driver V+ Att. adjust Applications • 45MHz to 1218MHz Downstream Edge QAM RF Modulators • Headend Equipment Ordering Information Part No. Description RFAM3790SB Sample bag 5 pcs RFAM3790SR 7” Reel with 100 pcs RFAM3790TR7 7” Reel with 250 pcs RFAM3790PCBA-410 Fully assembled Evaluation Board |
类似零件编号 - RFAM3790 |
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类似说明 - RFAM3790 |
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