2N1893 datasheet(2/5 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB =90 V

T amb =150 °C

µA

I EBO

Emitter Cutoff Current

(IC =0)

VEB =5 V

V(BR) CBO

Collector-base Breakdown

Voltage (IE =0)

I C =100

µA

120

V(BR)CE R*

Collector-emitter Breakdown

Voltage (R BE

≤ 10 Ω)

I C = 10 mA

100

V(B R)CEO

Collector-emitter Breakdown

Voltage (IB =0)

I C =10 mA

V(BR) EBO

Emitter-base Breakdown

Voltage (IC =0)

I E =100 µA7

VCE (s at )*

Collector-emitter Saturation

Voltage

I C =50 mA

I C =150 mA

I B =5 mA

I B =15 mA

1.2

VBE (s at) *

Base-emitter Saturation

Voltage

I C =50 mA

I C =150 mA

I B =5 mA

I B =15 mA

0.82

0.96

0.9

1.3

h FE*

DC Current Gain

I C = 0.1 mA

I C =10 mA

I C =150 mA

I C =10 mA

T amb =– 55

°C

VCE =10 V

120

h fe

Small Signal Current Gain

I C =1 mA

f = 1 kHz

I C =5 mA

f = 1 kHz

VCE =5 V

VCE =10 V

150

f T

Transition Frequency

I C =50 mA

f= 20 MHz

VCE = 10 V

MHz

C EBO

Emitter-base Capacitance

I C =0

f = 1 MHz

VEB = 0.5 V

C CBO

Collector-base Capacitance

I E =0

f = 1 MHz

VCB =10 V

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

219

°C/W

2N1893

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