2N2102 datasheet(1/4 Pages) STMICROELECTRONICS

部件名	2N2102

功能描述	EPITAXIAL PLANAR NPN

PDF	4 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2N2102

EPITAXIAL PLANAR NPN

s

GENERAL PURPOSE AMPLIFIER AND

SWITCH

DESCRIPTION

The 2N2102 is a silicon Planar Epitaxial NPN

transistor in Jedec TO-39 metal case. It is

intended for a wide variety of small-signall and

medium power

applications in military and

industrial equipments.

®

INTERNAL SCHEMATIC DIAGRAM

December 2002

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

120

V

VCEO

Collector-Emitter Voltage (IB = 0)

65

V

VCER

Collector-Emitter Voltage (RBE

≤ 10Ω)

80

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

1

A

Ptot

Total Dissipation at Tamb

≤ 25 oC

at TC

≤ 25 oC

1

5

W

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

TO-39

1/4

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类似说明 - 2N2102

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