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VNH3SP30-E 数据表(PDF) 21 Page - STMicroelectronics |
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VNH3SP30-E 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 33 page ![]() VNH3SP30-E Application information 21/33 Possible origins of fault conditions may be: ● OUTA is shorted to ground →overtemperature detection on high side A. ● OUTA is shorted to VCC →low side power MOSFET saturation detection(a). When a fault condition is detected, the user can know which power element is in fault by monitoring the INA, INB, DIAGA/ENA and DIAGB/ENB pins. In any case, when a fault is detected, the faulty leg of the bridge is latched off. To turn on the respective output (OUTX) again, the input signal must rise from low to high level. 3.1 Reverse battery protection Three possible solutions can be considered: 1. a Schottky diode D connected to VCC pin 2. an N-channel MOSFET connected to the GND pin (see Figure 33: Typical application circuit for DC to 10 kHz PWM operation short circuit protection on page 20 3. a P-channel MOSFET connected to the VCC pin The device sustains no more than -30A in reverse battery conditions because of the two body diodes of the power MOSFETs. Additionally, in reverse battery condition the I/Os of VNH3SP30-E will be pulled down to the VCC line (approximately -1.5V). A series resistor must be inserted to limit the current sunk from the microcontroller I/Os. If IRmax is the maximum target reverse current through µC I/Os, the series resistor is: 3.2 Open load detection in Off mode It is possible for the microcontroller to detect an open load condition by adding a simply resistor (for example, 10k ohm) between one of the outputs of the bridge (for example, OUTB) and one microcontroller input. A possible sequence of inputs and enable signals is the following: INA = 1, INB = X, ENA = 1, ENB = 0. ● normal condition: OUTA = H and OUTB = H ● open load condition: OUTA = H and OUTB = L: In this case the OUTB pin is internally pulled down to GND. This condition is detected on OUTB pin by the microcontroller as an open load fault. a. An internal operational amplifier compares the Drain-Source MOSFET voltage with the internal reference (2.7V Typ.). The relevant low side power MOS is switched off when its Drain-Source voltage exceeds the reference voltage. R V IOs V CC – I Rmax --------------------------------- = |
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