TDA2030A

Device overview

Doc ID 1459 Rev 2

3/23

Table 4.

Electrical characteristics

(Refer to the test circuit, VS = ±16 V, Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Vs

Supply voltage

± 6

± 22

V

Id

Quiescent drain current

50

80

mA

Ib

Input bias current

VS = ± 22 V

0.2

2

µA

Vos

Input offset voltage

VS = ± 22 V

± 2

± 20

mV

Ios

Input offset current

± 20 ± 200

nA

PO

Output power

d = 0.5%, Gv = 26 dB

f = 40 to 15000 Hz

RL= 4 Ω

RL= 8 Ω

VS = ± 19 V;

RL= 8 Ω

15

10

13

18

12

16

W

BW

Power bandwidth

Po = 15 W;

RL= 4 Ω

100

kHz

SR

Slew rate

8

V/µsec

Gv

Open loop voltage gain

f = 1 kHz

80

dB

Gv

Closed loop voltage gain

f = 1 kHz

25.5

26

26.5

dB

d

Total harmonic distortion

Po = 0.1 to 14 W;

RL= 4 Ω

f = 40 to 15 000 Hz;

f = 1 kHz

Po = 0.1 to 9 W, f = 40 to 15 000Hz

RL= 8 Ω

0.08

0.03

0.5

%

d2

Second order CCIF

intermodulation distortion

PO = 4W, f2 – f1 = 1kHz, RL = 4Ω

0.03

%

d3

Third order CCIF

intermodulation distortion

f1 = 14 kHz, f2 = 15 kHz

2f1 – f2 = 13 kHz

0.08

%

eN

Input noise voltage

B = Curve A

2

µV

B = 22Hz to 22kHz

3

10

µV

iN

Input noise current

B = Curve A

50

pA

B = 22Hz to 22kHz

80

200

pA

S/N

Signal-to-noise ratio

RL = 4Ω, Rg = 10kΩ, B = Curve A

PO = 15W

106

dB

PO = 1W

94

dB

Ri

Input resistance (pin 1)

(open loop) f = 1 kHz

0.5

5

M

Ω

SVR

Supply voltage rejection

RL = 4 Ω, Rg = 22 kΩ

54

dB

Gv = 26 dB, f = 100 Hz

Tj

Thermal shutdown junction

temperature

145

°C

Obsolete

Product(s)

- Obsolete

Product(s)