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BQ2002GSN 数据表(PDF) 7 Page - Texas Instruments

部件名 BQ2002GSN
功能描述  NiCd/NiMH Fast-Charge Management ICs
PDF  19 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

BQ2002GSN 数据表(HTML) 7 Page - Texas Instruments

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bq2002E/G
Absolute Maximum Ratings
Symbol
Parameter
Minimum
Maximum
Unit
Notes
VCC
VCC relative to VSS
-0.3
+7.0
V
VT
DC voltage applied on any pin
excluding VCC relative to VSS
-0.3
+7.0
V
TOPR
Operating ambient temperature
0
+70
°C
Commercial
TSTG
Storage temperature
-40
+85
°C
TSOLDER
Soldering temperature
-
+260
°C
10 sec max.
TBIAS
Temperature under bias
-40
+85
°C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Thresholds (TA = 0 to 70°C; VCC ±20%)
Symbol
Parameter
Rating
Tolerance
Unit
Notes
VTCO
Temperature cutoff
0.5 * VCC
±5%
V
VTS ≤ VTCO inhibits/terminates
fast charge and top-off
VHTF
High temperature fault
0.6
∗ VCC
±5%
VVTS <VHTF inhibits fast charge
start
VMCV
Maximum cell voltage
2
±5%
V
VBAT
≥ VMCV inhibits/terminates
fast charge and top-off
VLBAT
Minimum cell voltage
0.175
∗ VCC
±20%
VVBAT <VLBAT inhibits fast charge
start
-
∆V
BAT input change for
-
∆V detection
-12
±3
mV
PVD
BAT input change for
PVD detection
-2.5
±2.5
mV



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