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Z00607 数据表(PDF) 3 Page - STMicroelectronics |
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Z00607 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() Z00607 Characteristcs 3/7 Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 P(W) I (A) T(RMS) -40 -20 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 I, I , I [T ] / GTHL j I , I , I [T =25°C] GTHL j T (°C) j IGT IH &IL Figure 3. Surge peak on-state current versus number of cycles Figure 4. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 One cycle t=20ms I (A) TSM Number of cycles Non repetitive T initial = 25°C j Repetitive T = 25°C amb 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 200.0 t (ms) p I (A), I t (A s) TSM 22 It 2 dI/dt limitation: 20A/µs T initial = 25°C j ITSM Figure 5. On-state characteristics (maximum values) Figure 6. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) I (A) TM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 10.0 V (V) TM T = max. j Tj T = 25°C j T =max. j V =0.95 V R =420 m t0 d Ω 0.1 1.0 10.0 0.0 2.0 4.0 6.0 8.0 10.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dV/dt)c (V/µs) |
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