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2N2219A 数据表(PDF) 1 Page - STMicroelectronics |
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2N2219A 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. ® INTERNAL SCHEMATIC DIAGRAM June 1999 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Un it VCBO Collector-Base Voltage (IE =0) 75 V VCEO Collector-Emitter Volt age (IB =0) 40 V VEBO Emitter-Base Voltage (IC =0) 6 V IC Collector Current 0.8 A Ptot T otal Dissipation at Tamb ≤ 25 oC for 2N2219A for 2N2222A at T case ≤ 25 oC for 2N2219A for 2N2222A 0.8 0.5 3 1.8 W W W W Tstg Storage T emperature -65 to 200 oC Tj Max. Operating Junction Temperat ure 175 oC TO-18 TO-39 2N2219A approved to CECC 50002-100, 2N2222A approved to CECC 50002-101 available on request. 1/8 |
类似零件编号 - 2N2219A |
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类似说明 - 2N2219A |
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