2N2222 datasheet(2/5 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB =50 V

T amb =150

°C

µA

I EBO

Emitter Cutoff Current

(IC =0)

VEB =3 V

V(BR) CBO

Colllector-base Breakdown

Voltage (IE =0)

I C =10 µA60

V(BR)CE O *

Collector-emitter Breakdown

Voltage (IB =0)

I C =10 mA

V(BR) EBO

Emittter-base Breakdown

Voltage (IC =0)

I E =10

µA5

VCE (s at )*

Collector-emitter Saturation

Voltage

I C =150 mA

I C =500 mA

I B =15 mA

I B =50 mA

0.4

1.6

VB E (sat )*

Base-emitter Saturation

Voltage

I C =150 mA

I C =500 mA

I B =15 mA

I B =50 mA

1.3

2.6

h FE*

DC Current Gain

for 2N 221 8

I C = 0.1 mA

I C =1 mA

I C =10 mA

I C =150 mA

I C =500 mA

I C =150 mA

for 2N 221 9

I C = 0.1 mA

I C =1 mA

I C =10 mA

I C =150 mA

I C =500 mA

I C =150 mA

and 2N 22 21

VCE =10 V

VCE =1 V

and 2N 22 22

VCE =10 V

VCE =1 V

100

120

300

f T

Transition Frequency

I C =20 mA

f = 100 MHz

VCE = 20 V

250

MHz

C CBO

Collector-base Capacitance

I E =0

f = 100 kHz

VCB =10 V

Re(hie)

Real Part of Input

Impedance

I C =20 mA

f = 300 MHz

VCE =20 V

Ω

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

2 N22 18

2 N22 19

2N 222 1

2N 222 2

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

°C/W

187.5

°C/W

83.3

°C/W

300

°C/W

2N2218-2N2219-2N2221-2N2222

2/5

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