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TLOU262F 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLOU262F 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TLOU262(F),TLSU262(F),TLYU262(F) 2007-10-01 2 Electrical and Optical Characteristics (Ta = 25°C) Typ.Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLOU262(F) (612) 15 20 85 300 20 2.0 2.4 20 50 4 TLSU262(F) (636) 17 20 47.6 170 20 2.0 2.4 20 50 4 TLYU262(F) (590) 13 20 47.6 150 20 2.1 2.5 20 50 4 Unit nm mA mcd mA V mA μA V Precaution Please be careful of the followings • Soldering temperature: 260°C max Soldering time: 3 s max (soldering portion of lead: Up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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