0

2

4

6

8

10

12

14

0

2

4

6

8

10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 16A

TC = 125°C,I D = 16A

G001

0

1

2

3

4

5

6

7

8

9

10

0

3

6

9

12

15

18

21

24

27

Qg - Gate Charge (nC)

ID = 18A

VDS = 15V

G001

1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

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Folder

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CSD17577Q5A

SLPS516 – AUGUST 2014

CSD17577Q5A 30-V N-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

Low Qg and Qgd

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Thermal Resistance

VDS

Drain-to-Source Voltage

30

V

•

Avalanche Rated

Qg

Gate Charge Total (4.5 V)

13

nC

Qgd

Gate Charge Gate-to-Drain

2.8

nC

•

Pb Free Terminal Plating

VGS = 4.5 V

4.8

m

Ω

•

RoHS Compliant

RDS(on)

Drain-to-Source On-Resistance

VGS = 10 V

3.5

m

Ω

•

Halogen Free

VGS(th)

Threshold Voltage

1.4

V

•

SON 5 mm × 6 mm Plastic Package

Ordering Information(1)

2 Applications

Device

Qty

Media

Package

Ship

•

Point of Load Synchronous Buck in Networking,

CSD17577Q5A

2500

13-Inch Reel

SON 5 × 6 mm

Tape and

Telecom, and Computing Systems

Plastic Package

Reel

CSD17577Q5AT

250

7-Inch Reel

•

Optimized for Control, and Sync FET Applications

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

Absolute Maximum Ratings

This 30 V, 3.5 m

Ω, SON 5 mm × 6 mm NexFET™

power MOSFET is designed to minimize resistance in

TA = 25°C

VALUE

UNIT

power conversion applications.

VDS

Drain-to-Source Voltage

30

V

VGS

Gate-to-Source Voltage

±20

V

Top Icon

Continuous Drain Current (Package limited)

60

Continuous Drain Current (Silicon limited),

ID

83

A

TC = 25°C

Continuous Drain Current (1)

22

IDM

Pulsed Drain Current (2)

280

A

Power Dissipation(1)

3

PD

W

Power Dissipation, TC = 25°C

53

TJ,

Operating Junction and

–55 to 150

°C

Tstg

Storage Temperature Range

Avalanche Energy, single pulse

EAS

39

mJ

ID = 28, L = 0.1 mH, RG = 25 Ω

(1) Typical RθJA = 40°C/W on a 1-inch

2 , 2-oz. Cu pad on a

.

0.06-inch thick FR4 PCB.

.

(2) Max RθJC = 2.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.