2N3019 datasheet(1/4 Pages) STMICROELECTRONICS

部件名	2N3019

功能描述	HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

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制造商	STMICROELECTRONICS [STMicroelectronics]

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2N3019

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION

The 2N3019 is a silicon planar epitaxial NPN

transistors in Jedec TO-39 metal case, designed

for

high-current,

high

frequency

amplifier

application. It feature high gain and low saturation

voltage.

INTERNAL SCHEMATIC DIAGRAM

November 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

140

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

1

A

Ptot

Total Dissipation at Tamb

≤ 25 oC

at Tcase

≤ 25 oC

0.8

5

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

TO-39

1/4

类似零件编号 - 2N3019

制造商	部件名	数据表	功能描述
NXP Semiconductors	2N3019	51Kb / 8P	NPN medium power transistor 1997 Jun 19
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Siemens Semiconductor G...	2N3019	135Kb / 5P	NPN SILICON PLANAR TRANSISTOR

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