MCP73837/8

DS22071A-page 6

© 2007 Microchip Technology Inc.

Timer Enable (TE)

Input High Voltage Level

2—

—

V

Input Low Voltage Level

——

0.8

V

Input Leakage Current

—0.01

1

µA

Thermistor Bias

Thermistor Current Source

47

50

53

µA

2 k

Thermistor Comparator

Upper Trip Threshold

1.20

1.23

1.26

V

Upper Trip Point Hysteresis

—-40

—

mV

Lower Trip Threshold

0.235

0.250

0.265

V

Lower Trip Point Hysteresis

—40

—

mV

System Test (LDO) Mode

Input High Voltage Level

——

V

THERM Input Sink Current

3

5.5

20

µA

Stand-by Or System Test

Mode

Bypass Capacitance

1

4.7

——

µF

µF

Automatic Power Down (SLEEP Comparator, Direction Control)

Automatic Power Down Entry

Threshold

10 mV

100 mV

—

V

Automatic Power Down Exit Threshold

150 mV

250 mV

Thermal Shutdown

Die Temperature

—

150

—

°C

Die Temperature Hysteresis

—10

—

°C

DC CHARACTERISTICS (Continued)

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

when input power source is from USB-Port.

2:

The value is guaranteed by design and not production tested.

3:

4:

The maximum charge impedance has to be less than shutdown impedance for normal operation.