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2N3055... 数据表(PDF) 2 Page - STMicroelectronics |
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2N3055... 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEX Collector Cut-off Current (VBE = -1.5V) VCE = 100 V VCE = 100 V Tj = 150 oC 1 5 mA mA ICEO Collector Cut-off Current (IB = 0) VCE = 30 V 0.7 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 7 V 5 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 200 mA 60 V VCER(sus) ∗ Collector-Emitter Sustaining Voltage (RBE = 100 Ω) IC = 200 mA 70 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IB = 400 mA IC = 10 A IB = 3.3 A 1 3 V V VBE ∗ Base-Emitter Voltage IC = 4 A VCE = 4 A 1.8 V hFE ∗ DC Current Gain IC = 4 A VCE = 4 A IC = 10 A VCE = 4 A 20 5 70 fT Transition frequency IC = 0.5 A VCE = 10 V 3 MHz Is/b ∗ Second Breakdown Collector Current VCE = 40 V 2.87 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2N3055 / MJ2955 2/4 |
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