2N3700 datasheet(2/4 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Mi n.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current (IE =0)

VCB =90 V

T amb =150 °C

µA

I EBO

Emitter Cutoff Current (IC =0)

VEB =5 V

V(B R)CBO

Collector-base Breakdown

Voltage (IE =0)

I C =100

µA

140

V(BR)CE O *

Collector-emitter Breakdown

Voltage (IB =0)

I C =30 mA

V(B R)E BO

Emitter-base Breakdown Voltage

(IC =0)

I E =100 µA7

VCE(sat)*

Collector-emitter Saturation

Voltage

I C =150 mA

I C =500 mA

I B =15 mA

I B =50 mA

0.2

0.5

VBE(sat)*

Base-emitter Saturation Voltage

IC = 150 mA

I B = 15 mA

1.1

h FE*

DC Current Gain

I C = 0.1 mA

I C =10 mA

I C =150 mA

I C =500 mA

I C =1 A

I C =150 mA

T amb =– 55 °C

VCE =10 V

100

300

h fe

Small Signal Current Gain

I C =1 mA

f = 1 kHz

VCE =5 V

400

f T

Transition Frequency

I C =50 mA

f = 20 MHz

VCE =10 V

100

MHz

C EBO

Emitter-base Capacitance

I C =0

f= 1 MHz

VEB = 0.5 V

C CBO

Collector-base Capacitance

I E =0

f= 1 MHz

VCB =10 V

r bb ’C b’c

Feedback Time Constant

IC =10 mA

f= 4 MHz

VCB =10 V

400

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

350

°C/W

2N3700

2/4

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