2N3725 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

ELECTRICAL CHARACTERISTICS (Tamb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current (IE =0)

VCB =60 V

T amb =100

°C

1.7

120

µA

V(BR)CBO

Collector-base Breakdown

Voltage (IE =0)

I C =10 µA80

V(BR)CES

Collector-emitter Breakdown

Voltage (VBE =0)

I C =10 µA80

V(BR)CE O *

Collector-emitter Breakdown

Voltage (IB =0)

I C =10 mA

V(BR)E BO

Emitter-base Breakdown

Voltage (IC =0)

I E =10

µA6

VCE (s at )*

Collector-emitter Saturation

Voltage

I C =10 mA

I C =100 mA

I C =300 mA

I C =500 mA

I C =800 mA

I C =1000 mA

I B =1 mA

I B =10 mA

I B =30 mA

I B =50 mA

I B =80 mA

I B = 100 mA

0.19

0.21

0.31

0.4

0.5

0.6

0.25

0.26

0.4

0.52

0.8

0.95

VBE (sat )*

Base-emitter Saturation Voltage

I C =10 mA

I C =100 mA

I C =300 mA

I C =500 mA

I C =800 mA

I C =1000 mA

I B =1 mA

I B =10 mA

I B =30 mA

I B =50 mA

I B =80 mA

I B = 100 mA

0.9

0.64

0.75

0.89

1.0

1.1

0.76

0.86

1.1

1.2

1.5

1.7

h FE*

DC Current Gain

I C =10 mA

I C =100 mA

I C =300 mA

I C =1000 mA

I C =800 mA

I C =500 mA

VCE =1 V

VCE =5 V

VCE =2 V

VCE =1 V

150

h fe

High Frequency Current Gain

IC =50 mA

f = 100 MHz

VCE =10 V

CCB O

Collector-base Capacitance

I E =0

f = 1 MHz

VCB =10 V

CEB O

Emitter-base Capacitance

IC =0

f = 1 MHz

VCB = 0.5 V

t on **

Turn-on Time

I C =500 mA

I B =50 mA

VCC =30 V

t off**

Turn off Time

I C =500 mA

I B1 =– IB2 =

VCC =30 V

50 mA

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

** See test circuit.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

220

°C/W

2N3725

2/6

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