2N4014

October 1988

HIGH-VOLTAGE, HIGH CURRENT SWITCH

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

80

V

80

V

50

V

6

V

Collector Current

1

A

≤ 25 °C

≤ 25 °C

0.36

1.2

W

W

Storage and Junction Temperature

– 65 to 200

°C

The 2N4014 is a silicon planar epitaxial transistor in

TO-18 metal case. It is a high-voltage, high current

switch used for memory applications requiring

breakdown voltages up to 50 V and operating cur-

rents to 1 A. Fast switching times are assured be-

cause of the high minimum fT (300 MHz) and tight

control on storage time.

DESCRIPTION

TO-18

INTERNAL SCHEMATIC DIAGRAM

1/6