2N4036 datasheet(2/5 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Mi n.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB = – 60 V

– 20

I CEO

Collector Cutoff Current

(IB =0)

VCE = – 30 V

– 0.5

µA

I EBO

Emitter Cutoff Current

(IC =0)

VEB =– 5 V

– 20

V( BR)CB O

Collector-base Breakdown

Voltage (IE =0)

I C =– 100 µA

– 90

V(BR)CEX*

Collector-emitter Breakdown

Voltage (VBE = 1.5 V)

I C =– 10 mA

– 85

V(BR)CE R*

Collector-emitter Breakdown

Voltage (R BE =200

Ω)

I C =– 10 mA

– 85

V(BR)CE O *

Collector-emitter Breakdown

Voltage (IB =0)

I C =– 10 mA

– 65

V(B R)E BO

Emitter-base Breakdown Voltage

(IC =0)

I E =– 100

µA– 7

VCE(sat)*

Collector-emitter Saturation

Voltage

I C =– 150 mA

I B = – 15 mA

– 0.65

VBE *

Base-emitter Voltage

IC =– 150 mA

VCE = – 10 V

– 1.1

h FE*

DC Current Gain

I C = – 0.1 mA

I C =– 150 mA

I C =– 500 mA

VCE =– 10 V

140

f T

Transition Frequency

I C =– 50 mA

f = 20 MHz

VCE =– 10 V

MHz

C EBO

Emitter-base Capacitance

I C =0

f= 1 MHz

VEB = – 0.5 V

C CBO

Collector-base Capacitance

I E =0

f= 1 MHz

VCB =– 10 V

t on**

Turn-on Time

I C =– 150 mA

I B1 =– 15 mA

VCC = – 30V

110

t of f**

Turn-off Time

I C =– 150 mA

I B1 =– I B2 =–

VCC =– 30 V

15 mA

700

Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

** See test circuit.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

175

°C/W

2N4036

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