TSM4433CSRL datasheet(2/7 Pages) TSC

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TSM4433

20V P-Channel MOSFET

2/7

Version: A07

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-20

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-0.45

-0.95

Gate Body Leakage

VGS = ±8V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -16V, VGS = 0V

IDSS

-1.0

µA

On-State Drain Current

VDS ≤ -5V, VGS = -4.5V

ID(ON)

-6

VGS = -4.5V, ID = -3.9A

VGS = -2.5V, ID = -3.2A

110

Drain-Source On-State Resistance

VGS = -1.8V, ID = -2.6A

RDS(ON)

105

150

mΩ

Forward Transconductance

VDS = -5V, ID = -4A

gfs

6.5

Diode Forward Voltage

IS = -0.9A, VGS = 0V

VSD

- 0.8

-1.2

Dynamic

Total Gate Charge

15.23

Gate-Source Charge

Qgs

5.49

Gate-Drain Charge

VDS = -6V, ID = -3.9A,

VGS = -4.5V

Qgd

2.74

Input Capacitance

Ciss

882.51

Output Capacitance

Coss

145.54

Reverse Transfer Capacitance

VDS = -6V, VGS = 0V,

f = 1.0MHz

Crss

97.26

Switching

Turn-On Delay Time

td(on)

17.28

Turn-On Rise Time

3.73

Turn-Off Delay Time

td(off)

36.05

Turn-Off Fall Time

VDD = -6V, RL = 6Ω,

ID = -1A, VGEN = -4.5V,

RG = 6Ω

6.19

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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