2N5038 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = 140 V

VCE = 100 V

Tc = 150

oC50

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 70 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

VCER(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

RBE = 50

Ω

110

VCEX(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

RBE = 100

Ω VBE =-1.5V

150

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 12 A

IB = 1.2 A

IC = 20 A

IB = 5 A

2.5

VBE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 20 A

IB = 5 A

3.3

VBE

∗

Base-Emitter Voltage

IC = 12 A

VCE = 5 V

1.8

hFE

∗

DC Current Gain

IC = 2 A

VCE = 5 V

IC = 12 A

VCE = 5 V

250

100

hfe

Small Signal Current

Gain

IC = 2 A

VCE = 10 V

f = 5 MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

300

Rise Time

IC = 12 A

VCC = 30 V

IB1 = -IB2 = 1.2A

0.5

µs

Storage Time

1.5

µs

Fall Time

0.5

µs

Is/b

∗∗

Second Breakdown

Collector Current

VCE = 28 V

VCE = 45 V

0.9

Es/b

Second Breakdown

Energy

VBE = -4 V RBE = 20

Ω L = 180µH13

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N5038

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