2N5191 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = rated VCBO

0.1

ICEX

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEO

Tc = 125

o C

0.1

ICEO

Collector Cut-off

Current (IB = 0)

VCE = rated VCEO

1mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 100 mA

for 2N5191

for 2N5192

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1.5 A

IB = 0.15 A

IC = 4 A

IB = 1 A

0.6

1.4

VBE

∗

Base-Emitter Voltage

IC = 1.5 A

VCE = 2 V

1.2

hFE

∗

DC Current Gain

IC = 1.5 A

VCE = 2 V

for 2N5191

for 2N5192

IC = 4 A

VCE = 2 V

for 2N5191

for 2N5192

100

Transition frequency

IC = 1 A

VCE = 10 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N5191 / 2N5192

2/4

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