2N5195 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =rated VCBO

-0.1

ICEX

Collect or Cut-off

Current (VBE = -1.5V)

VCE =rated VCEO

Tc =125

o C

-0.1

-2

ICEO

Collect or Cut-off

Current (IB =0)

VCE =rated VCEO

-1

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =-5 V

-1

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC =-100 mA

-80

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-1.5 A

IB = -0.15 A

IC =-4 A

IB =-1 A

-0.6

-1.2

VBE

∗

Base-Emitt er Voltage

IC =-1.5 A

VCE =-2 V

-1.2

hFE

∗

DC Current G ain

IC =-1.5 A

VCE =-2 V

IC =-4 A

VCE =-2 V

Transit ion f requency

IC =-1 A

VCE =-10 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curves

2N5195

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